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Volumn 32, Issue 5, 1996, Pages 479-480

Efficient 4.2μm light emitting diodes for detecting CO2 at room temperature

Author keywords

Gas sensors; Light emitting diodes

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL SENSORS; CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; LIGHT EMISSION; LIQUID PHASE EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; SUBSTRATES;

EID: 0030082485     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960275     Document Type: Article
Times cited : (6)

References (23)
  • 2
    • 0018785177 scopus 로고
    • Optical-fibre network system for air-pollution monitoring over a wide area by optical absorption method
    • INABA, H., KOBAYASHI, T., HIRAMA, M., and HAMZA, M.: Optical-fibre network system for air-pollution monitoring over a wide area by optical absorption method', Electron. Lett., 1979, 15, p. 749
    • (1979) Electron. Lett. , vol.15 , pp. 749
    • Inaba, H.1    Kobayashi, T.2    Hirama, M.3    Hamza, M.4
  • 4
    • 0027678741 scopus 로고
    • Liquid phase epitaxial growth and photoluminescence of InAsSb grown on GaSb substrates from antimony solution
    • MAO, Y., and KRIER, A.: 'Liquid phase epitaxial growth and photoluminescence of InAsSb grown on GaSb substrates from antimony solution', J. Crystal Growth, 1993, 133, p. 108
    • (1993) J. Crystal Growth , vol.133 , pp. 108
    • Mao, Y.1    Krier, A.2
  • 5
    • 0029343926 scopus 로고
    • 0.9 on GaSb grown by liquid-phase epitaxy
    • 0.9 on GaSb grown by liquid-phase epitaxy', Semicond. Sci. Technol., 1995, 10, p. 930
    • (1995) Semicond. Sci. Technol. , vol.10 , pp. 930
    • Krier, A.1    Mao, Y.2
  • 8
    • 0022161361 scopus 로고
    • Liquid-phase epitaxy of In(As, Sb) on GaSb substrates using antimony-rich melts
    • SKETON, J.R., and KNIGHT, J.R.: 'Liquid-phase epitaxy of In(As, Sb) on GaSb substrates using antimony-rich melts', Solid-State Electron., 1985,28, p. 1166
    • (1985) Solid-State Electron. , vol.28 , pp. 1166
    • Sketon, J.R.1    Knight, J.R.2
  • 11
    • 3242873788 scopus 로고
    • Growth and structural characterisation of embedded InAsSb on GaAs-coated patterned silicon by molecular-beam epitaxy
    • DE BOECK, J., DOBBELAERE, W., VANHELLEMENT, J., MARTENS, R., and BORGHS, G.: 'Growth and structural characterisation of embedded InAsSb on GaAs-coated patterned silicon by molecular-beam epitaxy', Appl. Phys. Lett., 1991, 58, p. 928
    • (1991) Appl. Phys. Lett. , vol.58 , pp. 928
    • De Boeck, J.1    Dobbelaere, W.2    Vanhellement, J.3    Martens, R.4    Borghs, G.5
  • 12
    • 3242851595 scopus 로고
    • x (0 < x < 1) on GaAs and on GaAs-coated Si by molecular-beam epitaxy
    • x (0 < x < 1) on GaAs and on GaAs-coated Si by molecular-beam epitaxy', Appl Phys. Lett., 1989, 55, p. 1856
    • (1989) Appl Phys. Lett. , vol.55 , pp. 1856
    • Dobbelaere, W.1    De Boeck, J.2    Borghs, G.3
  • 16
    • 0001901425 scopus 로고
    • Electrical characteristics of InAsSb/GaSb heterojunctions
    • SRIVASTAVA, A.K., and ZYSKIND, J.L.: 'Electrical characteristics of InAsSb/GaSb heterojunctions', Appl. Phys. Lett., 1986, 49, p. 41
    • (1986) Appl. Phys. Lett. , vol.49 , pp. 41
    • Srivastava, A.K.1    Zyskind, J.L.2
  • 17
    • 0001129545 scopus 로고
    • Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy
    • FANG, Z.M., MA, K.Y., JAW, D.H., COHEN, R.M., and STRINGFELLOW, G.B.: 'Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy', J. Appl. Phys., 1990, 67, p. 7034
    • (1990) J. Appl. Phys. , vol.67 , pp. 7034
    • Fang, Z.M.1    Ma, K.Y.2    Jaw, D.H.3    Cohen, R.M.4    Stringfellow, G.B.5
  • 18
    • 0029310259 scopus 로고
    • InAsSb p-n junction light emitting diodes grown by liquid phase epitaxy
    • MAO, Y., and KRIER, A.: 'InAsSb p-n junction light emitting diodes grown by liquid phase epitaxy', J. Phys. Chem. Solids, 1995, 56, p. 759
    • (1995) J. Phys. Chem. Solids , vol.56 , pp. 759
    • Mao, Y.1    Krier, A.2
  • 19
    • 0027927190 scopus 로고
    • High-power diode-laser-pumped InAsSb/GaSb and GaInAsSb/ GaSb lasers emitting from 3 to 4m
    • LE, H.Q., TURNER, G.W., EGLASH, S.J., CHOI, H.K., and COPPETA, D.A.: 'High-power diode-laser-pumped InAsSb/GaSb and GaInAsSb/ GaSb lasers emitting from 3 to 4m', Appl. Phys. Lett., 1984, 62, p. 152
    • (1984) Appl. Phys. Lett. , vol.62 , pp. 152
    • Le, H.Q.1    Turner, G.W.2    Eglash, S.J.3    Choi, H.K.4    Coppeta, D.A.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.