High electron mobility 18300 cm2/V·s in the InAlAs/InGaAs pseudomorphic structure obtained by channel indium composition modulation

Journal of Electronic Materials

Volumn 25, Issue 5, 1996, Pages 555-558

  Nakayama, T ^a   Miyamoto, H ^a   Oishi, E ^a   Samoto, N ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Electron mobility; Heterojunction field effect transistor (HJFET); InAlAs; InAs; InGaAs; Pseudomorphic structure

Indexed keywords

EID: 0006493591     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf02666502     Document Type: Article

References (10)

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