Some effects of indium composition on pseudomorphic InxGa1-xAs/In0.52Al0.48As modulation-doped heterostructures grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 158, Issue 4, 1996, Pages 443-448

  Yoon, S F ^a   Miao, Y B ^a   Radhakrishnan, K ^a   Duan, H L ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b MBE Technology Pte Ltd   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; INDIUM; MOLECULAR BEAM EPITAXY; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; STRAIN;

HALL MOBILITY; INTERFACIAL STRAIN; LATTICE MATCH VALUE; LOW TEMPERATURE PHOTOLUMINESCENCE MEASUREMENT; PSEUDOMORPHIC MODULATION DOPED HETEROSTRUCTURE; QUANTUM SIZE EFFECT;

SEMICONDUCTOR GROWTH;

EID: 0030086516     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00470-X     Document Type: Article

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