Enhanced hot-carrier induced degradation in shallow trench isolated narrow channel PMOSFET's

IEEE Electron Device Letters

Volumn 19, Issue 9, 1998, Pages 332-334

  Chen, Jone F ^a,b   Ishimaru, Kazunari ^a,c   Hu, Chenming ^a,b  

^a IEEE   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRAPS; HOT CARRIERS; INDUCED CURRENTS;

TRENCH ISOLATION STRUCTURE;

MOSFET DEVICES;

EID: 0032162935     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.709632     Document Type: Article

References (9)

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