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Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 429-433

Interface control of Pb(Zr x Ti 1-x )O 3 thin film on silicon substrate with heteroepitaxial YSZ buffer layer

(6) Horita, Susumu a Naruse, Tetsuya a Watanabe, Mikio a Masuda, Atsushi a Kawada, Tsuyoshi a Abe, Yukinari a

a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Japan)

Author keywords

Ferroelectricity; Heteroepitaxy; PZT film; Si substrate; YSZ buffer layer

Indexed keywords

CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; FERROELECTRICITY; INTERFACES (MATERIALS); LEAKAGE CURRENTS; POLARIZATION; SEMICONDUCTING FILMS; SUBSTRATES; YTTRIUM COMPOUNDS;

CAPACITANCE VOLTAGE CHARACTERISTICS; HETEROEPITAXIAL BUFFER LAYERS; LEAD ZIRCONATE TITANATE (PZT); POLARIZATION VOLTAGE HYSTERESIS;

SEMICONDUCTING LEAD COMPOUNDS;

EID: 0031548738 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(97)80119-5 Document Type: Article

Times cited : (24)

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