Reduction of threading dislocation density in an (InAs)1(GaAs)1 strained short-period superlattice by atomic hydrogen irradiation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 5 SUPPL. A, 1996, Pages 2561-2565

  Yokozeki, Mikihiro ^a   Yonezu, Hiroo ^a   Tsuji, Takuto ^a   Ohshima, Naoki ^a   Pak, Kangsa ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Atomic hydrogen; Lattice relaxation; Misfit dislocation; Strained short period superlattices; Threading dislocation

Indexed keywords

CRACK PROPAGATION; DISLOCATIONS (CRYSTALS); HYDROGEN; INTERFACES (MATERIALS); IRRADIATION; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THREE DIMENSIONAL;

ATOMIC HYDROGEN; DISLOCATION GENERATION; LATTICE RELAXATION; STRAINED SHORT PERIOD SUPERLATTICE; THREADING DISLOCATION;

SEMICONDUCTOR SUPERLATTICES;

EID: 0030149679     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.2561     Document Type: Article

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