Deposition and processing of bismuth titanate thin films for direct wafer bonding

Materials Chemistry and Physics

Volumn 55, Issue 1, 1998, Pages 55-60

  Alexe, M ^a   Hesse, D ^a   Gosele U ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

Chemical mechanical polishing; Direct wafer bonding; Ferroelectric thin film; Metal ferroelectric silicon heterostructures

Indexed keywords

ANNEALING; BISMUTH COMPOUNDS; BONDING; CHEMICAL POLISHING; DEPOSITION; FERROELECTRIC MATERIALS; MORPHOLOGY; PH; SILICON WAFERS; SURFACES;

BISMUTH TITANATE; CHEMICAL MECHANICAL POLISHING; CHEMICAL SOLUTION DEPOSITION; DIRECT WAFER BONDING; FERROELECTRIC THIN FILMS; METAL FERROELECTRIC SILICON HETEROSTRUCTURE;

THIN FILMS;

EID: 0032142650     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(98)00090-X     Document Type: Article

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