Highly reliable furnace-grown N2O tunnel oxide for a microcontroller with embedded flash EEPROM

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1996, Pages 55-60

  Maiti, Bikas ^a   Shum, Danny ^a   Paulson, Wayne M ^a   Chang, Ko Min ^a   Tobin, Philip J ^a   Weidner, Mark ^a   Kuo, Clinton ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; HOT CARRIERS; NITROGEN OXIDES; NONVOLATILE STORAGE; RELIABILITY; SEMICONDUCTOR STORAGE;

CONTROL WAFERS; ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM); EXTENDED ENDURANCE STRESS; IMPROVED READ DISTURB LIFETIME; MICROCONTROLLER; OXYNITRIDE TUNNEL DIELECTRIC; WRITE AND ERASE ENDURANCE;

PROM;

EID: 0029701168     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)