Optimization of pre-epitaxial processes to obtain high-quality ZnSe/GaAs heterointerfaces grown in a low-pressure metalorganic vapour-phase epitaxy system

Journal of Crystal Growth

Volumn 191, Issue 4, 1998, Pages 663-672

  Taudt, W ^a   Xu, J ^a   Hardt, A ^a   Korfer H ^a   Liu, Q ^b   Hamadeh, H ^a   Lakner, H ^b   Woitok, J ^a   Heuken, M ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; ETCHING; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY;

DITERTIARYBUTYLSELENIDE; DOUBLE CRYSTAL X-RAY DIFFRACTION (DCXRD); LOW-PRESSURE METALLORGANIC VAPOR-PHASE EPITAXY; ZINC SELENIDE;

HETEROJUNCTIONS;

EID: 0032137720     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00364-9     Document Type: Article

References (22)

1. Sony press release, 31.01.1996 www.sony.co.jp/Corporate Cruise/News/laser.html.
2. L.H. Kuo, L. Salamanca-Riba, B.J. Wu, G.M. Haugen, J.M. DePuydt, G. Hofler, H. Cheng, J. Vac. Sci. Technol. B 13 (4) (1995) 1694.
3. J. Petruzello, R. Drenten, J.M. Gaines, J. Crystal Growth 138 (1994) 686.
4. J. Petruzello, S.P. Herko, J.M. Gaines, T. Marshall, Phys. Stat. Sol. B 187 (1995) 297.
5. K. Mohammed, D.A. Cammack, R. Dallby, P. Newbury, B.L. Greenberg, J. Petruzzello, R.N. Bhargava, Appl. Phys. Lett. 50 (1987) 37.
6. S. Guha, H. Munekata, L.L Chang, J. Appl. Phys. 73 (5) (1993) 2294.
7. Y. Chen, X. Liu, E. Weber, E.D. Bourret, Z. Liliental-Weber, E.E. Haller, Washburm, D.J. Olego, D.R. Dorman, J.M. Gaines, N.R. Tasker, Appl. Phys. Lett. 65 (1994) 549.
8. S. Akram, H. Ehsani, I.B. Bhat, J. Crystal Growth 124 (1992) 628.
9. W. Spahn, H.R. Ress, K. Schüll, M. Ehninger, D. Hommel, G. Landwehr, J. Crystal Growth 159 (1996) 761.
10. H. Stanzl, T. Reisinger, K. Wolf, M. Kastner, B. Hahn, W. Gebhardt, Phys. Stat. Sol. B 187 (1995) 303.
11. S. Saito, P.J. Parbrook, S. Nakamura, Y. Nishikawa, G. Hatakoshi, Int. Symp. on Blue Laser and Light Emitting Diodes, Chiba Univ., Japan, 5-7 March 1996.
12. K. Wolf, S. Jilka, H. Sahin, H. Stanzl, T. Reisinger, A. Naumov, W. Gebhardt, J. Crystal Growth 152 (1995) 34.
13. T. Yao, Y. Okada, S. Matsui, K. Ishida, I. Fujmoto, J. Crystal Growth 81 (1987) 518.
14. J. Lee, W.E. Mayo, Th. Tsakalokos, J. Electron. Mater. 21 (1992) 867.
15. J. Petruzello, K.W. Haberen, S.P. Herko, T. Marshall, J.M. Gaines, S. Guha, G.D. U'Ren, G.M. Haugen, J. Crystal Growth 159 (1996) 73.
16. J. Zheng, J.W. Allen, J. Crystal Growth 138 (1994) 477.
17. K. Ohkawa, A. Tsujimura, T. Nishikawa, S. Yoshii, T. Yokogawa, M. Kubo, Y. Sasai, J. Crystal Growth 159 (1996) 632.
18. R.J. Miles, J.F. Swenberg, M.W. Wang, M.C. Phillips, T.C. McGill, J. Crystal Growth 138 (1994) 523.
19. M. Yoneta, H. Saito, M. Ohishi, J. Crystal Growth 138 (1994) 110.
20. B. Chelluri, T.Y. Chang, A. Ourmazd, A.M. Dayem, J.L. Zyskind, A. Srivastava, Appl. Phys. Lett. 49 (24) (1986) 1665.
21. H. Mayer, U. Rössler, K. Wolf, A. Elstner, H. Stanzl, T. Reisinger, W. Gebhardt, Phys. Rev. B. 52 (7) (1995) 4956.
22. D.N. Gnoth, I.B. Poole, T.L. Ng, D.A. Evans, N. Maung, J.O. Williams, A.C. Wright, J. Crystal Growth 170 (1997) 198.