SCOPUS 정보 검색 플랫폼

Journal of Crystal Growth

Volumn 186, Issue 1-2, 1998, Pages 38-42

Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE

(6) Wang, Hongmei a Fan, Tiwen a Wu, Ju a Zeng, Yiping a Dong, Jianrong a Kong, Meiying a

a INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

INDIUM ARSENIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032023139 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00455-7 Document Type: Article

Times cited : (11)

References (19)

1
- 0005060657
- J.W. Matthews, A.E. Blakeslee, J. Crystal Growth 27 (1974) 18.
- (1974) J. Crystal Growth , vol.27 , pp. 18
- Matthews, J.W.¹ Blakeslee, A.E.²

2
- 33744558557
- J.W. Matthews, A.E. Blakeslee, J. Crystal Growth 29 (1975) 273.
- (1975) J. Crystal Growth , vol.29 , pp. 273
- Matthews, J.W.¹ Blakeslee, A.E.²

3
- 0042894659
- J.W. Matthews, A.E. Blakeslee, J. Crystal Growth 32 (1976) 2656.
- (1976) J. Crystal Growth , vol.32 , pp. 2656
- Matthews, J.W.¹ Blakeslee, A.E.²

4
- 21544464728
- R. People, J.C. Bean, Appl. Phys. Lett. 47 (1985) 322.
- (1985) Appl. Phys. Lett. , vol.47 , pp. 322
- People, R.¹ Bean, J.C.²

5
- 0004727293
- B.W. Dodson, J.Y. Tsao, Appl. Phys. Lett. 53 (1988) 2498.
- (1988) Appl. Phys. Lett. , vol.53 , pp. 2498
- Dodson, B.W.¹ Tsao, J.Y.²

6
- 0001868302
- B.W. Dodson, J.Y. Tsao, Phys. Rev. Lett. 38 (1988) 12383.
- (1988) Phys. Rev. Lett. , vol.38 , pp. 12383
- Dodson, B.W.¹ Tsao, J.Y.²

7
- 0000540679
- B. Elman, E.S. Koteles, P. Melman, K. Ostreicher, C. Sung, J. Appl. Phys. 70 (1991) 2634.
- (1991) J. Appl. Phys. , vol.70 , pp. 2634
- Elman, B.¹ Koteles, E.S.² Melman, P.³ Ostreicher, K.⁴ Sung, C.⁵

8
- 3643130905
- D.J. Eaglesham, M. Cerullo, Phys. Rev. Lett. 64 (1990) 1943.
- (1990) Phys. Rev. Lett. , vol.64 , pp. 1943
- Eaglesham, D.J.¹ Cerullo, M.²

9
- 0042894656
- J. Novak, A. Schlachetzki (Eds.), Kluwer Academic Publishers, Dordrecht
- L. Francesio, P. Franzosi, S. Gennari, L. Nasi, G. Salviati, M.R. Bruni, G. Padeletti, M.G. Simeone, in: J. Novak, A. Schlachetzki (Eds.), Heterostructure Epitaxy and Devices, Kluwer Academic Publishers, Dordrecht, 1996, p. 157.
- (1996) Heterostructure Epitaxy and Devices , pp. 157
- Francesio, L.¹ Franzosi, P.² Gennari, S.³ Nasi, L.⁴ Salviati, G.⁵ Bruni, M.R.⁶ Padeletti, G.⁷ Simeone, M.G.⁸

10
- 36449001457
- B. Brar, D. Leonard, Appl. Phys. Lett. 66 (1995) 463.
- (1995) Appl. Phys. Lett. , vol.66 , pp. 463
- Brar, B.¹ Leonard, D.²

11
- 0342991744
- J.H. Neave, P.J. Dodson, B.A. Joyce, Jing Zhang, Appl. Phys. Lett. 47 (1985) 100.
- (1985) Appl. Phys. Lett. , vol.47 , pp. 100
- Neave, J.H.¹ Dodson, P.J.² Joyce, B.A.³ Zhang, J.⁴

12
- 0010697920
- S.-Z. Chang, T.-C. Chang, S.-C. Lee, J. Appl. Phys. 73 (1993) 4916.
- (1993) J. Appl. Phys. , vol.73 , pp. 4916
- Chang, S.-Z.¹ Chang, T.-C.² Lee, S.-C.³

13
- 0027561301
- H. Kawada, S. Shirayone, K. Takahashi, J. Crystal Growth 128 (1993) 550.
- (1993) J. Crystal Growth , vol.128 , pp. 550
- Kawada, H.¹ Shirayone, S.² Takahashi, K.³

14
- 0023042992
- S. Matteson, H.D. Shih, Appl. Phys. Lett. 48 (1986) 47.
- (1986) Appl. Phys. Lett. , vol.48 , pp. 47
- Matteson, S.¹ Shih, H.D.²

15
- 33749648979
- MA. Cotta, R.A. Hamm, S.N.G. Chu, L.R. Harriott, H. Temkin, Appl. Phys. Lett. 66 (1995) 2358.
- (1995) Appl. Phys. Lett. , vol.66 , pp. 2358
- Cotta, M.A.¹ Hamm, R.A.² Chu, S.N.G.³ Harriott, L.R.⁴ Temkin, H.⁵

16
- 0042490799
- B.W. Dodson, Appl. Phys. Lett. 53 (1988) 394.
- (1988) Appl. Phys. Lett. , vol.53 , pp. 394
- Dodson, B.W.¹

17
- 33746405789
- S. Guha, A. Madhukar, K.C. Rajkumar, Appl. Phys. Lett. 57 (1990) 2110.
- (1990) Appl. Phys. Lett. , vol.57 , pp. 2110
- Guha, S.¹ Madhukar, A.² Rajkumar, K.C.³

18
- 0040516114
- Tsai, Y.C. Kao, J. Appl. Phys. 67 (1990) 2862.
- (1990) J. Appl. Phys. , vol.67 , pp. 2862
- Tsai¹ Kao, Y.C.²

19
- 0001103576
- M. Tamura, A. Hashmoto, N. Sugiyama, J. Appl. Phys. 70 (1991) 4770.
- (1991) J. Appl. Phys. , vol.70 , pp. 4770
- Tamura, M.¹ Hashmoto, A.² Sugiyama, N.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.