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Volumn 175-176, Issue PART 1, 1997, Pages 191-196
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Properties of InAs thin films grown on (1 0 0)-oriented GaAs substrate with various tilted angles and directions of misorientation
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Author keywords
InAs Hall element; InAs morphology on GaAs; InAs on GaAs; MBE; Thin film
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Indexed keywords
CARRIER CONCENTRATION;
HALL EFFECT DEVICES;
MOLECULAR BEAM EPITAXY;
MOLECULAR ORIENTATION;
MORPHOLOGY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR GROWTH;
SUBSTRATES;
SURFACE STRUCTURE;
THIN FILMS;
INDIUM CARBIDE;
SEMICONDUCTING FILMS;
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EID: 0031142750
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(96)00956-6 Document Type: Article |
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Times cited : (5)
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References (7)
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