Enhancement of selective chemical vapor deposition of copper by nitrogen plasma pretreatment

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 4 B, 1998, Pages

  Kim, Young Suk ^a   Kim, Dong Joon ^a   Kwak, Sung Kwan ^a   Kim, Eun Kyu ^a   Min, Suk Ki ^a   Jung, Donggeun ^a  

^a Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; GLASS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; PLASMA APPLICATIONS; SECONDARY ION MASS SPECTROMETRY; SUBSTRATES; SURFACE TREATMENT; TITANIUM NITRIDE;

BOROPHOSPHOSILICATE GLASS; TIME OF FLIGHT SECONDARY ION MASS SPECTROSCOPY (TOF SIMS);

SEMICONDUCTING FILMS;

EID: 0032049117     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l462     Document Type: Article

References (13)