DESIGN AND FABRICATION OF HIGH TRANSCONDUCTANCE MODULATION-DOPED (Al,Ga)As/GaAs FETS.

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 1, Issue 2, 1982, Pages 186-189

  Lee, K ^a   Shur, M S ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAMS - APPLICATIONS; SEMICONDUCTING GALLIUM COMPOUNDS - GROWTH;

MODULATION DOPING; MOLECULAR BEAM EPITAXY;

TRANSISTORS, FIELD EFFECT;

EID: 0020115534     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582484     Document Type: Conference Paper

References (13)