Charge Control of the Heterojunction Two-Dimensional Electron Gas for MESFET Application

IEEE Transactions on Electron Devices

Volumn 28, Issue 7, 1981, Pages 790-795

  Delagebeaudeuf, Daniel ^a   Linh, Nuyen T ^a  

^a THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT - HETEROJUNCTIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

FIELD EFFECT TRANSISTOR; MATHEMATICAL MODEL; NONBIOLOGICAL MODEL;

EID: 0019392863     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1981.20432     Document Type: Article

References (8)

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2. D. C. Tsui and R. A. Logan, “Observation of two dimensional electrons LPE-grown GaAs-Al x Ga 1 _ x As heterojunctions,” Appl. Phys. Lett., vol. 35, no. 2, pp. 99–101, 1979.
3. D. Delagebeaudeuf, P. Delescluse, P. Etienne, M. Laviron I. Chaplart, and N. T. Linh, “Two dimensional electron gas MESFET structure,” Electron. Lett., vol. 16, pp. 667–668, 1980.
4. T. Mimura, S. Hiyamizu, T. Fujii, and K. Nanbu, “A new field effect transistor with selectively doped GaAs/n-Al x Gai _ x As heterojunctions,” Jap. J. Appl. Phys., vol. 19, pp. 225-227, 1980.
5. S. I. Cserveny, “Potential distribution and capacitance of abrupt heterojunctions,” Int. J. Electronics, vol. 25, pp. 65–80, 1968.
6. B. L. Sharma and R. K. Purohit, Semiconductor Heterojunctions. New York: Pergamon, 84.
7. H. Morkoc, S. G. Bandy, R. Sankaran, G. A. Antypas, and R. L. Bell, “A study of high speed normally off and normally on A1 0.5 Ga 0.5 As heterojunction gate GaAs FET's,” IEEE Trans. Electron Devices, vol. ED-25, pp. 619–627, June 1978.
8. M. S. Shur, “Analytical model of GaAs MESFET's,” IEEE Trans. Electron Devices, vol. ED-25, pp. 612–618, June 1978.