MODFET versus MESFET: The Capacitance Argument

IEEE Transactions on Electron Devices

Volumn 41, Issue 8, 1994, Pages 1477-1480

  Morton, Chris G ^b  

^a UNIVERSITY OF YORK   (United Kingdom)

^b UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTS; ELECTRIC VARIABLES CONTROL; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; ELECTRONS; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; IMPURITIES; MATHEMATICAL MODELS; MESFET DEVICES; PERFORMANCE;

CHARGE CONTROL; CUTOFF FREQUENCY; ELECTRON CONFINEMENT; MODFET; TRANSCONDUCTANCE;

CAPACITANCE;

EID: 0028484857     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.297749     Document Type: Article

References (13)

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