Strained multiple-quantum-well lasers grown on GaSb emitting between 2 and 2.4 μm

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2997, Issue , 1997, Pages 2-13

  Baranov, Alexei N ^a   Cuminal, Y ^a   Bertru, N ^a   Alibert, Claude L ^a   Joullié, Andre F ^a  

^a UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS; INTEGRATED OPTICS; LASERS; OPTICAL MATERIALS; PHOTONICS; SEMICONDUCTOR QUANTUM WIRES;

BARRIER LAYER (BL); HIGH EFFICIENCY; LASER EMITTING; LOW THRESHOLD LASERS; POTENTIAL WELLS; QW INTERFACES; ROOM-TEMPERATURE (RT); THRESHOLD CURRENTS;

QUANTUM WELL LASERS;

EID: 0343277839     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.264141     Document Type: Conference Paper

References (17)

1. 1-X midinfrared lasers", Appl. Phys. Lett. 66 (2), 118, 1995.
2. J. R. Meyer, C. A. Hoffman, and F. J. Bartoli, L. R. Ram-Mohan, "Type-II quantum-well lasers for the mid-wavelength infrared", Appl. Phys. Lett. 67 (6), 757, 1995.
3. R. H. Miles, D. H. Chow, Y.-H. Zhang, P. D. Brewer, and R. G. Wilson, "Midwave infrared stimulated emission from a GaInSb/InAs superlattice", Appl. Phys. Lett. 66 (15), 1921, 1995.
4. H. K. Choi and S. J. Eglash, "High-power multiple-quantum-well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1 μm with low threshold current density", Appl. Phys. Lett. 61 (10), 1154, 1992.
5. H. K. Choi and S. J. Eglash, "High-efficiency high-power GaInAsSb-AlGaAsSb double-heterostructure lasers emitting at 2.3 μm", IEEE Journal of Quant. Electron. 27 (6), 1555, 1991.
6. H. K. Choi, G. W. Turner, and S. J. Eglash "High-power GaInAsSb-AlGaAsSb multiple-quantum-well diode lasers emitting at 1.9 μm", IEEE Photonics Technology Lett. 6 (1), 7, 1994.
7. H. K. Choi, G.F. W. Turner, M. K. Connors, S. Fox, C. Dauga, and M. Dagenais, "High-power, high-temperature operation of GaInAsSb-AlGaAsSb ridge-waveguide lasers emitting at 1.9 μm", IEEE Photonics Technology Lett. 7 (3), 281, 1994.
8. A. N. Baranov, Y. Cuminal, G. Boissier, J. C. Nicolas, J. L. Lazzari, C. Alibert, and A. Joullié "Electroluminescence of GaInSb/GaSb strained single quantum well structures grown by molecular beam epitaxy", Semicond. Sci. Technol. 11, 1185, 1996.
9. C. G. Van de Walle, "Band lineups and deformation potentials in the model-solid theory", Phys. Rev. B 39, 1871, 1989.
10. R. People and S. K. Sputz, "Band nonparabolicities in lattice-mismatched strained bulk semiconductor layers", Phys. Rev. B 41, 8431, 1990.
11. Y.Tsou, A.Ichii, and E.M.Garmire,"Improved InAs double heterostructure lasers with better confinement", IEEE Journal of Quant. Electron 28 (5), 1261, 1992.
12. S. L. Wong, R. T. Warburton, R. J. Nicholas, N. J. Mason, and P. J. Walker, "A magneto-optical study of coupled quantum wells in strained GaInSb/GaSb", Physica B 184, 106, 1993.
13. 1-XSb/GaSb heterostructures with X ≤ 0.4", J. Vac. Sci. Technol. B11 (4), 1652, 1993.
14. E. S.-M. Tsui, P. Blood, and A. I. Kucharska, "Charge neutrality in quantum well structures", Semicond. Sci. Technol. 5, 333, 1990.
15. J. Barrau, T. Amand, M. Brousseau, R. J. Simes, and L. Goldstein, "Induced electrostatic confinement of the electron gas in tensile strained InGaAs/InGaAsP quantum well lasers", J. Appl. Phys. 71, 5768, 1992.
16. M. Silver and E. P. O'Reily, "Gain and radiative current density in InGaAs/InGaAsP lasers with electrostatically confined electron states", IEEE Journal of Quant. Electron 30, 547, 1994.
17. L. L. Chang and L. Esaki "Electronic properties of InAs-GaSb superlattices", Surface Science 98, 70, 1980.