Diffraction-limited 1.3-μm-wavelength tapered-gain-region lasers with >1-W CW output power

IEEE Photonics Technology Letters

Volumn 8, Issue 11, 1996, Pages 1429-1431

  Walpole, J N ^a,b   Donnelly, J P ^a,b   Groves, S H ^b   Missaggia, L J ^b   Woodhouse, J D ^b   Bailey, R J ^b   Napoleone, A ^b  

^a IEEE

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC WAVE DIFFRACTION; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS;

DIFFRACTION LIMITED FAR FIELD RADIATION PATTERNS; OPTICAL CAVITY;

SEMICONDUCTOR LASERS;

EID: 0030287321     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.541539     Document Type: Article

References (8)

1. S. H. Groves, J. P. Donnelly, J. N. Walpole, J. D. Woodhouse, L. J. Missaggia, R. J. Bailey, and A. Napoleone, "Strained-layer InGaAsP diode lasers with tapered gain region for operation at λ = 1.3 μm," IEEE Photon. Technol. Lett., vol. 6, pp. 1286-1288, 1994.
2. J. N. Walpole, E. S. Kintzer, S. R. Chinn, C. A. Wang, and L. J. Missaggia, "High-power monolithic tapered semiconductor oscillators," Conf. Lasers and Electro-Opt., 1994 Tech. Dig. Ser., Washington, DC: Opt. Soc. Amer., 1994, vol. 8, p. 1.
3. E. S. Kintzer, J. N. Walpole, S. R. Chinn, C. A. Wang, and L. J. Missaggia, "High-power, strained-layer amplifiers and lasers with tapered gain regions," IEEE Photon. Technol. Lett., vol. 5, pp. 605-608, 1993.
4. R. Parke, D. F. Welch, A. Hardy, R. Lang, D. Mehuys, S. O'Brien, K. Dzurko, and D. Scifres, "2.0 W CW, diffraction-limited operation of a monolithically integrated master oscillator power amplifier," IEEE Photon. Technol. Lett., vol. 5, pp. 297-300, 1993.
5. D. Mehuys, S. O'Brien, R. J. Lang, A. Hardy, and D. F. Welch, "5 W diffraction-limited, tapered-stripe unstable resonator semiconductor laser," Electron. Lett., vol. 30, p. 1855, 1994.
6. S. O'Brien, D. Mehuys, R. J. Lang, and D. F. Welch, "1 W CW single frequency, diffraction-limited unstable resonator semiconductor laser with distributed Bragg reflector mirrors," Electron. Lett., vol. 31, pp. 203-205, 1995.
7. P. S. Yeh, I. F. Wu, S. Jiang, and M. Dagenais, "High-power high-gain monolithically integrated preamplifier/power amplifier," Electron. Lett., vol. 29, p. 1981, 1993.
8. J. N. Walpole, E. S. Kintzer, S. R. Chinn, C. A. Wang, and L. J. Missaggia, "High-power strained-layer InGaAs/AlGaAs tapered traveling wave amplifier," Appl. Phys. Lett., vol. 61, p. 740, 1992.