Independently addressable VCSEL arrays on 3-μm pitch

IEEE Photonics Technology Letters

Volumn 10, Issue 7, 1998, Pages 917-919

  Chua, C L ^a   Thornton, R L ^a   Treat, D W ^a   Donaldson, R M ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

Oxide aperture; Semiconductor device fabrication; Semiconductor laser arrays; Semiconductor lasers; Surface emitting lasers

Indexed keywords

CROSSTALK; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

OXIDE APERTURE; TRANSPARENT CONTACT TECHNOLOGY; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0032121523     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.681269     Document Type: Article

References (7)

1. D. L. Huffaker and D. G. Deppe, "Multiwavelength, densely-packed 2 × 2 vertical-cavity surface-emitting laser array fabricated using selective oxidation," IEEE Photon. Technol. Lett., vol. 8, pp. 858-860, July 1996.
2. D. L. Huffaker, L. A. Graham, and D. G. Deppe, "Fabrication of high-packing-density vertical-cavity surface-emitting laser arrays using selective oxidation," IEEE Photon. Technol. Lett., vol. 8, pp. 596-598, May 1996.
3. M. Grabherr, R. Jäger, R. Michalzik, B. Weigl, G. Reiner, and K. J. Ebeling, "Efficient single-mode oxide-confined GaAs VCSEL's emitting in the 850-nm wavelength regime," IEEE Photon. Technol. Lett., vol. 9, pp. 1304-1306, Oct. 1997.
4. K. L. Lear, K. D. Choquette, R. P. Schneider, S. P. Kilcoyne, and K. M. Geib, "Selectively oxidized vertical cavity surface emitting lasers with 50% power conversion efficiency," Electron. Lett., vol. 31, no. 3, pp. 208-209, 1995.
5. M. H. MacDougal, P. D. Dapkus, V. Pudikov, H. Zhao, and G. M. Yang, "Ultralow threshold current vertical-cavity surface-emitting lasers with AlAs oxide-GaAs distributed bragg reflectors," IEEE Photon. Technol. Lett., vol. 7, pp. 229-231, Mar. 1995.
6. C. L. Chua, R. L. Thornton, and D. W. Treat, "Planar laterally-oxidized vertical-cavity lasers for low threshold high density top surface emitting arrays," IEEE Photon. Technol. Lett., vol. 9, pp. 1060-1062, Aug. 1997.
7. C. L. Chua, R. L. Thornton, D. W. Treat, V. K. Yang, and C. C. Dunnrowicz, "Indium tin oxide transparent electrodes for broad-area top-emitting vertical-cavity lasers fabricated using a single lithography step," IEEE Photon. Technol. Lett., vol. 9, pp. 551-553, May 1997.