Planar laterally oxidized vertical-cavity lasers for low-threshold high-density top-surface-emitting arrays

IEEE Photonics Technology Letters

Volumn 9, Issue 8, 1997, Pages 1060-1062

  Chua, C L ^a   Thornton, R L ^a   Treat, D W ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

Oxide aperture; Semiconductor device fabrication; Semiconductor laser arrays; Semiconductor lasers; Surfaceemitting lasers

Indexed keywords

ELECTRIC CURRENTS; ETCHING; OHMIC CONTACTS; OXIDATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0031212613     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.605499     Document Type: Article

References (7)

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