Coulomb blockade in nano-junction array fabricated by nonlithographic method

Solid-State Electronics

Volumn 42, Issue 7-8, 1998, Pages 1257-1266

  Haruyama, J ^a   Davydov, D N ^b   Routkevitch, D ^b   Ellis, D ^b   Statt, B W ^b   Moskovits, M ^b   Xu, J M ^b  

^a AOYAMA GAKUIN UNIVERSITY   (Japan)

^b UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ELECTRIC CONDUCTANCE; ELECTRONS; NANOTECHNOLOGY; POROUS MATERIALS; THERMAL EFFECTS;

COULOMB BLOCKADE;

TUNNEL JUNCTIONS;

EID: 0032120713     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00014-8     Document Type: Article

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