Spatial correlation effect of ionized impurities on relaxation and scattering times in high-mobility GaAs heterojunctions

Solid State Communications

Volumn 100, Issue 6, 1996, Pages 411-414

  Kawamura, T ^a   Das Sarma, S ^a  

^a Bldg 142   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; ELECTRON SCATTERING; MATHEMATICAL MODELS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

SINGLE PARTICLE RELAXATION TIME; SPACER LAYER THICKNESS; SPATIAL CORRELATION EFFECTS; TWO DIMENSIONAL ELECTRON GAS;

HETEROJUNCTIONS;

EID: 0030290218     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)00391-2     Document Type: Article

References (11)

1. Lin, B.J.F., Tsui, D.C. and Weimann, G., Solid State Commun. 56, 1985, 287.
2. Ando, T., J. Phys. Soc. Jpn 51, 1982, 3900.
3. Ando, T., Fowler, A.B. and Stern, F., Rev. Mod. Phys. 54, 1982, 499.
4. Stern, F., Appl. Phys. Lett. 43, 1983, 974.
5. Stern, F. and Das Sarma, S., Solid State Electron. 28, 1985, 211.
6. Das Sarma, S. and Stern, F., Phys. Rev. B32, 1985, 8442.
7. Pfeiffer, L., West, K.W., Störmer, H.L. and Baldwin, K.W., Appl. Phys. Lett. 55, 1989, 1888.
8. Mycielski, J., Solid State Commun. 60, 1986, 165.
9. Lassnig, R., Solid State Commun. 65, 1988, 765.
10. Efros, A.L., Pikus, F.G. and Samsonidze, G.G., Phys. Rev. B41, 1990, 8295.
11. Levi, A.F.J., McCall, S.L. and Platzman, P.M., Appl. Phys. Lett. 54, 1989, 940.