Effects of environment on annealing behavior of In+ implanted c-axis sapphire

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 134, Issue 1, 1998, Pages 22-26

  Xie, Dong Zhu ^a   Zhu, De Zhang ^a   Cao, De Xin ^a   Yu, Guo Qing ^a   Pan, Hao Chang ^a   Xu, Hong Jie ^a  

^a Shanghai Institute of Nuclear Research AcademiaSinica   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; AMORPHIZATION; ANNEALING; INDIUM; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SINGLE CRYSTALS; X RAY DIFFRACTION ANALYSIS;

RUTHERFORD BACKSCATTERING SPECTROMETRY AND CHANNELING (RBS C);

SAPPHIRE;

EID: 0031647354     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00494-1     Document Type: Article

References (17)