Monolithic 1.3μm resonant cavity light emitting diode grown by solid source molecular beam epitaxy

Electronics Letters

Volumn 34, Issue 15, 1998, Pages 1519-1520

  Jalonen, M ^a,b   Kongas J ^a   Toivonen, M ^a   Savolainen, P ^a   Orsila, S ^a   Salokatve, A ^a,c   Pessa, M ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^b VAISALA OYJ   (Finland)

^c Coherent Tutcore Ltd ^*  (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; LIGHT EMISSION; MIRRORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

DISTRIBUTED BRAGG REFLECTORS;

LIGHT EMITTING DIODES;

EID: 0032116528     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981011     Document Type: Article

References (8)

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2. JALONEN, M., TOIVONEN, M., KÖNGÄS, J., SALOKATVE, A., and PESSA, M.: Oxide-confined resonant cavity red light-emitting diode grown by solid source molecular beam epitaxy', Electron. Lett., 1997, 33, pp. 1989-1990
3. SALET, P., PAGNOD-ROSSIAUX, PH., GABORIT, F., PLAINS, A., and JACQUET, J.: 'Gas-source molecular-beam epitaxy and optical characterisation of highly-reflective InGaAsP/InP multilayer Bragg mirrors for 1.3μm vertical-cavity lasers', Electron. Lett., 1997, 33, pp. 1145-1147
4. HUNT, N.E.J., SCHUBERT, E.F., LOGAN, R.A., and ZYDZIK, G.J.: 'Enhanced spectral power density and reduced linewidth at 1.3μm in an InGaAsP quantum well resonant-cavity light-emitting diode', Appl. Phys. Lett., 1992, 61, pp. 2287-2289
5. DEPRETER, B., BLONDELLE, I., MOERMAN, I., BAETS, R., VAN DAELE, P., and DEMEESTER, P.: 'InP microcavity LED emitting at 1.55μm'. Proc. 10th Annual Meeting of IEEE Lasers and Electro-Optics Society, San Francisco, CA, 10-13 November 1997, Vol. 1, pp. 241-242
6. TOIVONEN, M., JALONEN, M., SAVOLAINEN, P., KÖNGÄS, J., and PESSA, M.: 'Solid source molecular beam epitaxy growth of GaInP/ AlGaInP heterostructures and 600-nm-range quantum well laser diodes'. Proc. 9th Int. Conf. on InP and Related Materials, Hyannis, MA, 11-15 May 1997, pp. 336-339
7. PESSA, M., TOIVONEN, M., JALONEN, M., SAVOLAINEN, P., and SALOKATVE, A.: 'All-solid-source molecular beam epitaxy for growth of III-V compound semiconductors', Thin Solid Films, 1997, pp. 237-243
8. GEIB, K.M., CHOQUETTE, K.D., HOU, H.Q., and HAMMONS, B.E.: 'Fabrication issues of oxide-confined VCSELs'. Proc. SPIE, 1997, Vol. 3003, pp. 69-74