Solid source molecular beam epitaxy growth of GaInP/AlGaInP heterostructures and 600-nm-range quantum well laser diodes

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1997, Pages 336-339

  Toivonen, Mika ^a   Jalonen, Marko ^a   Savolainen, Pekka ^a   Kongas, Jukka ^a   Pessa, Markus ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; CURRENT DENSITY; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; OPTIMIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES;

SOLID SOURCE MOLECULAR BEAM EPITAXIAL (SSMBE) GROWTH;

QUANTUM WELL LASERS;

EID: 0030709896     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)