Polarization-dependent refractive-index change induced by superlattice disordering

IEEE Journal of Quantum Electronics

Volumn 32, Issue 11, 1996, Pages 1922-1930

  Suzuki, Yasuhiro ^a,b,d,e,f   Iwamura, Hidetoshi ^a,b   Miyazawa, Takeo ^b,g   Wakatsuki, Atsushi ^b,h,i   Mikami, Osamu ^b,c  

^a IEEE

^b NTT CORPORATION   (Japan)

^c TOKAI UNIVERSITY   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

^e Musashino Electrical Communication Lab   (Japan)

^f JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^g WASEDA UNIVERSITY   (Japan)

^h TOHOKU UNIVERSITY   (Japan)

ⁱ OPTICAL SOCIETY OF AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; INTEGRATED OPTOELECTRONICS; LIGHT POLARIZATION; ORDER DISORDER TRANSITIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR LASERS; SEMICONDUCTOR SUPERLATTICES;

POLARIZATION DEPENDENT REFRACTIVE INDEX CHANGE; SUPERLATTICE DISORDERING;

REFRACTIVE INDEX;

EID: 0030290423     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.541678     Document Type: Article

References (24)

1. H. Nakashima, S. Semura. T. Ohta, Y. Uchida, H. Saito, T. Fukuzawa, T. Kuroda, and K. L. I. Kobayashi, "Device characteristics of GaAlAs buried-multiquaantum-well lasers fabricated by Zn-diffusion-induced disordering." IEEE J. Quantum Electron., vol. QE-21, pp. 629-633, 1985.
2. A. Furuya, M. Makiuchi, and O. Wada, "Continuous-wave operation of lateral current injection multiquantum-well laser," Electron. Lett., vol. 24, pp. 1282-1283, 1988.
3. R. L. Thornton, J. E. Epler, and T. L. Paoli, "Monolithic integration of a transparent dielectric waveguide into an active laser cavity by impurity-induced disordering," Appl. Phys. Lett., vol. 51, pp. 1983-1985, 1987.
4. J. Werner, E. Kapon, N. G. Stoffel, E. Colas, S. A. Schwanz, C. L. Scwartz, and N. Andreadakis, "Integrated external cavity GaAs/AlGaAs lasers using selective quantum well disordering," Appl. Phys. Lett., vol. 55, pp. 540-542, 1989.
5. T. Miyazawa, H. Iwamura, and M. Naganuma, "Integrated external cavity InGaAs/lnP lasers using cap-annealing disordering," IEEE Photon. Technol. Lett., vol. 3, pp. 421-423, 1991.
6. E. Kapon, N. C. Stoffel, E. A. Dobisz, and R. Bhat, "Birefringent channel waveguides defined by impurity-induced superlattice disordering," Appl. Phys. Lett., vol. 52, pp. 351-353, 1988.
7. 2 cap disordering," Appl. Phys. Lett., vol. 56, pp. 19-20, 1990.
8. 2 cap disordering," IEEE Photon. Technol. Lett., vol. 2, pp. 818-819, 1990.
9. Y. Suzuki, H. Iwamura, T. Miyazawa, and O. Mikami, "Polarization mode selective channel waveguides in an InGaAs/InP disordered superlattice," Appl. Phys. Lett., vol. 57, pp. 2745-2747, 1990.
10. _, "A novel waveguided polarization mode splitter using refractive index changes induced by superlattice disordering," in Tech. Dig. Integrat. Photon. Res., Monterey, CA, paper ThH4, p. 123, 1991.
11. J. D. Ralston, S. O'Brien, G. W. Wicks, and L. F. Eastman, "Roomtemperature exiton transition in partially intermixed GaAs/AlGaAs superlattice," Appl. Phys. Lett., vol. 52, pp. 1511-1513, 1988.
12. A. Wakatsuki, H. Iwamura, Y. Suzuki, T. Miyazawa, and O. Mikami, "Refractive index change of GaInAs/InP disordered superlattice waveguide," IEEE Photon. Technol. Lett., vol. 3, pp. 905-907, 1991.
13. 1-xAs-GaAs multilayer heterostructure," J. Appl. Phys., vol. 49, pp. 2919-2921, 1978.
14. 1-xAs Multiple quantum well," Opt. Commun., vol. 56, pp. 235-239, 1985.
15. G. M. Alman, L. A. Molter, H. Shen, and M. Dutta, "Refractive index approximations from linear parturbation theory for planar MQW waveguides," IEEE J. Quantum Electron., vol. 28, pp. 650-657, Mar. 1992.
16. T. Yamanaka, N. Yoshimoto, K. Wakita, and K. Yokoyama, "Prediction of highly efficient electro-optic modulation by TM-polarized light in lattice-matched quantum well structures," submitted to Int. J. Optoelectron.
17. N. Yoshimoto, T. Yamanaka, S. Kondo, Y. Noguchi, and K. Wakita, "Polarization properties of the field-induced refractive index and absorption change at a large detuning energy region using InGaAlAs/InAlAs MQW structures," to be submitted to J. Appl. Phys.
18. 1-xAs interfaces," Appl. Phys. Lett., vol. 49, pp. 223-225, 1986.
19. T. E. Schlesinger and T. Kuech, "Determination of the interdiffusion of Al and Ga in undoped (Al,Ga)As/GaAs quantum wells," Appl. Phys. Lett., vol. 49, pp. 519-520, 1986.
20. H. C. Casey, Jr., and M. B. Panish, Heterostructure Lasers. San Diego, CA: Academic, 1978.
21. K. Nakashima, Y. Kawaguchi, Y. Kamamura, H. Asahi, and Y. Imamura, "Intermixing process of InGaAs/InP MQW gown by metalorganic molecular beam cpitaxy at thermal annealing," Jpn. J. Appl. Phys., vol. 26, pp. L1620-L1622, 1987.
22. K. Mukai, M. Sugawara, and S. Yamazaki, "Interdiffusion process in InGaAs/InP quantum well structures," J. Crystal Growth, vol. 115, pp. 433-438, 1991.
23. K. Utaka, Y. Suematsu, K. Kobayashi. and H. Kawanishi, "GaInAsP/InP integrated twin-guide lasers with first-order distributed Bragg reflectors at 1.3 μm wavelength," Jpn. J. Appl. Phys., vol. 19, pp. L137-L140, Feb. 1980.
24. M. Born and E. Wolf, Principles of Optics, 6th ed. Oxford. U.K.: Pergamon, 1987, pp. 705-708.