Reverse I-V characteristics of Au/semi-insulating InP (100)

Semiconductor Science and Technology

Volumn 8, Issue 5, 1993, Pages 709-711

  Lee, T C ^a   Au, H L ^a   Chen, T P ^a   Ling, C C ^a   Fung, S ^a   Beling, C D ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

REVERSE CURRENT VOLTAGE CHARACTERISTICS; THERMIONIC FIELD EMISSION THEORY;

BAND STRUCTURE; ELECTRIC PROPERTIES; GOLD; MATHEMATICAL MODELS; THERMAL EFFECTS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0027594984     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/8/5/016     Document Type: Article

References (15)

1. Positron Mobility Measurements and Their Relevance to Defect and Impurity Studies in Semiconductors and Insulators
2. Positron Mobility in Gallium Arsenide