AlGaAs/GaAs HBTs with extrinsic base regrowth

Journal of Crystal Growth

Volumn 188, Issue 1-4, 1998, Pages 355-358

  Hsin, Y M ^a   Li, N Y ^a   Tu, C W ^a   Asbeck, P M ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

HBT; In situ etch; MOMBE; Regrowth; TDMAAS

Indexed keywords

ARSENIC COMPOUNDS; MOLECULAR BEAM EPITAXY; OXIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

DIMETHYLAMINOARSENIC;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032099239     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00099-2     Document Type: Article

References (10)

1. O. Nakajima, K. Nagata, H. Ito, T. Ishibashi, T. Sugeta, Jpn. J. Appl. Phys. 24 (1985) L596.
2. A.F.J. Levi, B. Jalali, Appl. Phys. Lett. 60 (1992) 460.
3. Y.M. Hsin, N.Y. Lin, C.W. Tu, P.M. Asbeck, Electron. Lett. 32 (1996) 1323.
4. H. Shimawaki, Y. Amamiya, N. Furuhata, K. Honjo, IEEE TED. 42 (1995) 1735.
5. N.Y. Li, Y.M. Hsin, P.M. Asbeck, C.W. Tu, J. Crystal Growth 175 (1997) 387.
6. N.Y. Li, Y.M. Hsin, W.G. Bi, P.M. Asbeck, C.W. Tu, Appl. Phys. Lett. 70 (1997) 2589.
7. D.S.L. Mui, T.A. Strand, B.J. Thibeault, L.A. Coldren, P.M. Petroff, E.L. Hu, Inst. Phys. Conf. Ser. 141 (1995) 69.
8. M. Micovic, D.L. Miller, F. Flack, R.W. Streater, Appl. Phys. Lett. 69 (1996) 2682.
9. D.R. Pehlke, D. Pavlidis, IEEE Trans. Microwave Theory Technol 40 (1992) 2367.
10. S.J. Prasad, Tech. Dig. IEEE Bipolar Circuits Technol. Meeting, 1992, p. 204.