Experimental I-V characteristics of AIGaAs/GaAs heterojunction bipolar transistors with very thin bases

Electronics Letters

Volumn 32, Issue 14, 1996, Pages 1323-1324

  Hsin, Y M ^a   Vu, D P ^b   Asbeck, P M ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b KOPIN CORPORATION   (United States)

Author keywords

Aluminium gallium arsenide; Gallium arsenide; Heterojunction bipolar transistors

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; ELECTRON TRANSPORT PROPERTIES; ELECTRONS; EPITAXIAL GROWTH; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

BASE BULK RECOMBINATION CURRENT; CURRENT GAIN; RECOMBINATION CURRENT DENSITY; SURFACE RECOMBINATION BASE CURRENT; THERMAL VELOCITY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030568652     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960853     Document Type: Article

References (5)

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