An Analytical Method for Two-Dimensional Field Distribution of a MOS Structure with a Finite Field Plate

IEEE Transactions on Electron Devices

Volumn 42, Issue 1, 1995, Pages 192-194

  Chung, S K ^a   Yoo, D C ^a   Choi, Y I ^a  

^a Ajou University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CAPACITORS; DIELECTRIC MATERIALS; FUNCTIONS; IMAGING TECHNIQUES; INVERSE PROBLEMS; MATHEMATICAL MODELS; NUMERICAL ANALYSIS; PERMITTIVITY; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; VECTORS;

BIPOLAR COORDINATES; BREAKDOWN VOLTAGE; DIFFERENTIAL WIDTH STRIP; FIELD PLATED PN JUNCTION; FINITE FIELD PLATE; INVERSE CIRCULAR FUNCTION; REVERSED BIAS MOS CAPACITOR; SURFACE CHARGE DENSITY; TWO DIMENSIONAL FIELD DISTRIBUTION;

MOS DEVICES;

EID: 0029207579     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.370016     Document Type: Article

References (6)

1. A. S. Grove, O. Leistiko, and W. W. Hooper, “Effects of surface fields on the breakdown voltage of planar silicon p-n junctions,” IEEE Trans. Electron Devices, vol. ED-14, pp. 157–162, Mar. 1967.
2. B. J. Baliga, Ed., High- High-Voltage Integrated Circuits. New York: IEEE Press, 1988.
3. K. P. Brieger, E. Falck, and W. Gerlach, “The contour of an optimal field plate-An analytical approach,” IEEE Trans. Electron Devices, vol. 35, May 1988.
4. A. Rusu and C. Bulucea, “Deep-depletion breakdown voltage of silicon-dioxide/silicon MOS capacitors,” IEEE Trans. Electron Devices, vol. ED-26, pp. 202–205, 1979.
5. C. B. Goud and K. N. Bhat, “Two-dimensional analysis and design considerations of high-voltage planar junctions equipped with field plate and guard ring,” IEEE Trans. Electron Devices, vol. 38, pp. 1497–1504, June 1991.
6. J. D. Jackson, Classical Electrodynamics. New York: John Wiley, 1962.