An analytical model for minimum drift region length of SOI RESURF diodes

IEEE Electron Device Letters

Volumn 17, Issue 1, 1996, Pages 22-24

  Chung, Sang Koo ^b   Han, Seung Youp ^b   Shin, Jin Cheol ^c   Choi, Yearn Ik ^a,b   Kim, Sang Bae ^a,b  

^a IEEE

^b Ajou University   (South Korea)

^c Korea Electronics Co   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELD EFFECTS; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY;

DRIFT REGION LENGTH; SOFTWARE PACKAGE PISCES II;

SEMICONDUCTOR DIODES;

EID: 0029752898     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.475565     Document Type: Article

References (6)

1. S. Merchant, E. Arnold, H Baumgart, S. Mukherjee, H. Pein, and R. Pinker, "Realization of high breakdown voltage (> 700 V) in thin SOI device," in Proc. ISPSD '91, 1991, pp 31-35.
2. Y. S. Huang and B. J. Baliga, "Extension of RESURF principle to dielectrically isolated power devices," in Proc ISPSD '91, 1991, pp. 27-30.
3. S. Merchant, E. Arnold, H. Baumgart, R. Egloff, T. Letavic, S. Mukherjee, and H. Pein, "Dependence of breakdown voltage on drift length and buried oxide thickness SOI RESURF LDMOS transistors," in Proc. ISPSD '93, 1993, pp 124-128.
4. A. Appels, M. G. Collet, P. A. H. Hert, H. M. J. Vaes, and J. F. C. M. Verhoeven, "Thin-layer high-voltage devices (RESURF Devices)," Philips J. Res, Vol. 35, no. 1, pp. 1-13, 1980.
5. W. Fulop, "Calculation of avalanche breakdown of silicon p-n junction," Solid-State Electron., vol. 10, pp. 39-43, 1967.
6. R. van Overstracten and H. De Man, "Measurement of the ionization rates in diffused silicon p-n junction," Solid-State Electron., vol. 13, pp. 583-608, 1970.