Study of GaxIn1-xP layers grown on InP for HFET application

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1997, Pages 324-327

  Cohen, G M ^a   Zisman, P ^a   Bahir, G ^a   Ritter, D ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTALLINE MATERIALS; ELECTRIC BREAKDOWN OF SOLIDS; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; RELAXATION PROCESSES; SEMICONDUCTOR DOPING; STRAIN; TRANSCONDUCTANCE;

HETEROSTRUCTURE FIELD EFFECT TRANSISTOR;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030653815     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)