A new method for characterizing ultrafast resonant-tunnelling diodes with electrooptic sampling

Optical and Quantum Electronics

Volumn 28, Issue 7, 1996, Pages 897-905

  Shimizu, N ^a   Nagatsuma, T ^a   Waho, T ^a   Shinagawa, M ^a   Yaita, M ^a   Yamamoto, M ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROOPTICAL EFFECTS; IRRADIATION; LASER PULSES; PHOTODIODES; PROBES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SWITCHING FUNCTIONS;

ELECTRICAL SIGNAL; ELECTROOPTIC SAMPLING; RESISTANCE CAPACITANCE TIME CONSTANT; SLEW RATE; SWITCHING TIMES; ULTRAFAST RESONANT TUNNELLING DIODES;

TUNNEL DIODES;

EID: 0030192207     PISSN: 03068919     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF00820155     Document Type: Article

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