CBE grown (GaIn)(AsP) laser diodes for monolithic integration

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1880-1883

  Kratzer, Heinrich ^a   Nutsch, Andreas ^a   Torabi, Bahram ^a   Tränkle, Günther ^b   Weimann, Günter ^c  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^c FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

Butt join; Chemical beam epitaxy; Gallium indium arsenide; Indium phosphide; Integrated optics; Long wavelength laser; Phosphide; Selective growth

Indexed keywords

EID: 0348150768     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1880     Document Type: Article

References (5)

1. P. J. A. Thijs, L. F. Tiermeijer, J. J. M. Binsma and T. van Dongen: IEEE Quantum Electron. 30, (1994) 447.
2. A. Nutsch, B. Torabi, H. Kratzer, G. Tränkle and G. Weimann: 9th Int. Conf. Molecular Beam Epitaxy (MBE IX), Malibu, USA 1996.
3. G. Tränkle, R. Müller, A. Nutsch, B. Torabi and G. Weimann: 22nd Int. Symp. Compound Semiconductors, Cheju Island, Korea 1995, p. 75.
4. B. Torabi, A. Nutsch, H. Kratzer, G. Trärkle and G. Weimann: 9th Int. Conf. Indium Phosphide and Related materials, Schwäbisch Gmünd, Germany 1996, p. 773.
5. R. C. Keller, M. Sedman-Eggebert and H. J. Richter: Appl. Phys. Lett. 67 (1995) 3750.