Strained 1.55 μm GaInAsP/GaInAsP SCH MQW laser grown by CBE

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 773-776

  Torabi, B ^a   Nutsch, A ^a   Kratzer, H ^a   Traenkle, G ^a   Weimann, G ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; COMPOSITION EFFECTS; HETEROJUNCTIONS; QUANTUM THEORY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; STRAIN;

QUANTUM WELL NUMBER; SEPARATE CONFINEMENT HETEROSTRUCTURE (SCH); STRAIN SYMMETRIZATION;

QUANTUM WELL LASERS;

EID: 0029721084     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)