High frequency GalnP/GaAs heterostructure-emitter bipolar transistor with low offset voltage

Electronics Letters

Volumn 33, Issue 8, 1997, Pages 714-716

  Ou, Hai Jiang ^a   Hsu, Chung Chi ^b   Yang, Yue Fei ^a   Yang, E S ^a  

^a Department of Earth and Environmental Sciences   (United States)

^b CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Bipolar transistors; Heterojunction bipolar transistors

Indexed keywords

CIRCUIT OSCILLATIONS; INTEGRATED CIRCUIT MANUFACTURE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; VOLTAGE MEASUREMENT;

HETEROSTRUCTURE EMITTER BIPOLAR TRANSISTOR (HEBT);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031120712     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970485     Document Type: Article

References (11)

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