Planar InGaP/GaAs HBTs for high speed optoelectronic circuit applications

Electronics Letters

Volumn 33, Issue 1, 1997, Pages 85-86

  Driad, R ^a   Desrousseaux, P ^a   Duchenois, A M ^a   Alexandre, F ^a   Launay, P ^a  

^a ORANGE LABS   (France)

Author keywords

Heterojunction bipolar transistors; Optoelectronic devices

Indexed keywords

CHEMICAL BEAM EPITAXY; CURRENT DENSITY; INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED OPTOELECTRONICS; OHMIC CONTACTS; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; TRANSMISSION LINE THEORY;

COLLECTOR CURRENT DENSITY; CUTTOFF FREQUENCIES; DIELECTRIC FILM DEPOSITION; EMITTER COLLECTOR VOLTAGE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031546408     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970015     Document Type: Article

References (5)

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3. YANG, J.Y., PLUMTON, D.L., and WHITE, W.A.: 'Planar heterojunction bipolar transistor with an implanted base', IEEE Electron. Device, 1989, 25, (4), pp. 282-283
4. DRIAD, R., DUCHENOIS, A.M., ZERGUINE, D., ALEXANDRE, F., LEGAY, P., and LAUNAY, P.: 'Fully planar AlGaAs/GaAs HBTs achieved by selective CBE regrowth', IEEE Electron. Device, 1994, 15, (11), pp. 480-481
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