On the possible effects of AlGaAsSb growth parameters on the 2-DEG concentration in AlGaAsSb/InGaAs/AlGaAsSb QW's

IEEE Transactions on Electron Devices

Volumn 45, Issue 6, 1998, Pages 1170-1175

  Anwar, A F M ^a,b   Webster, Richard T ^a  

^a UNIVERSITY OF CONNECTICUT   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Compound semiconductors; MODFET; Quantum wells; Semiconductor epitaxial layers; Semiconductor heterojunctions

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

MOLE FRACTION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032094847     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.678500     Document Type: Article

References (8)

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