An envelope function description of the quantum well formed in AlxGa1-xAsySb1-y/InAs/Al xGa1-xAsySb1-y heterostructures

Journal of Applied Physics

Volumn 80, Issue 12, 1996, Pages 6827-6830

  Anwar, A F M ^a   Webster, Richard T ^b  

^a UNIVERSITY OF CONNECTICUT   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4243110974     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363812     Document Type: Article

References (8)

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