An InAs Channel Heterojunction Field-Effect Transistor with High Transconductance

IEEE Electron Device Letters

Volumn 11, Issue 11, 1990, Pages 526-528

  Yoh, Kanji ^a   Moriuchi, Toshiaki ^a   Inoue, Masataka ^a  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS--GROWTH;

TRANSCONDUCTANCES;

TRANSISTORS, FIELD EFFECT;

EID: 0025516610     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.63021     Document Type: Article

References (11)

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