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Applied Physics Letters

Volumn 55, Issue 8, 1989, Pages 789-791

Heterojunction field-effect transistors based on AlGaSb/InAs

(4) Luo, L F a Beresford, R a Wang, W I a Munekata, H b

a Columbia University ^* (United States)

b IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041958272 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.101761 Document Type: Article

Times cited : (46)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.