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Volumn 189-190, Issue , 1998, Pages 716-719

Crystal orientation dependence of p-type contact resistance of GaN

Author keywords

Contact resistance; Crystal orientation; GaN; Ohmic contact; Tunnelling model

Indexed keywords

CRYSTAL ORIENTATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; OHMIC CONTACTS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS;

GALLIUM NITRIDE; TUNNELLING MODEL;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032094258 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00269-3 Document Type: Article

Times cited : (5)

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