Homogeneity of CdZnTe detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 410, Issue 1, 1998, Pages 100-106

  Hermon, H ^a   Schieber, M ^a,b   James, R B ^a   Lund, J ^a   Antolak, A J ^a   Morse, D H ^a   Kolesnikov, N N P ^c   Ivanov, Y N ^c   Goorsky, M S ^d   Yoon, H ^d   Toney, J ^e   Schlesinger, T E ^e  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b HEBREW UNIVERSITY OF JERUSALEM   (Israel)

^c INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^d UNIVERSITY OF CALIFORNIA   (United States)

^e CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ELECTRIC CURRENT MEASUREMENT; EMISSION SPECTROSCOPY; INFRARED TRANSMISSION; LEAKAGE CURRENTS; MICROSCOPIC EXAMINATION; PHOTOLUMINESCENCE; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; X RAY CRYSTALLOGRAPHY;

CADMIUM ZINC TELLURIDE; SEMICONDUCTOR DETECTORS; VERTICAL HIGH PRESSURE BRIDGMAN (VHPB) METHOD;

RADIATION DETECTORS;

EID: 0032092570     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(98)00184-3     Document Type: Article

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