Temperature dependence of photoluminescence of GaP1-xNx alloys

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 496-499

  Yaguchi, Hiroyuki ^a   Biwa, Goshi ^a   Miyoshi, Seiro ^a   Aoki, Daiichiro ^a   Arimoto, Keisuke ^a   Onabe, Kentaro ^a   Ito, Ryoichi ^a   Shiraki, Yasuhiro ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Band gap; GaPN; Photoluminescence

Indexed keywords

ACTIVATION ENERGY; ENERGY GAP; EXCITONS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS;

THERMAL ACTIVATION;

GALLIUM ALLOYS;

EID: 0032092389     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00338-8     Document Type: Article

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