Theoretical study of conduction band edge formation in GaP1 - XNx alloys using a tight-binding approximation

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 500-504

  Yaguchi, H ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Alloy; Conduction band; GaPN; Localization; Tight binding method

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; ELECTRONIC STRUCTURE; SEMICONDUCTING GALLIUM COMPOUNDS;

CONDUCTION BAND EDGE FORMATION; TIGHT BINDING METHOD;

GALLIUM ALLOYS;

EID: 0032090874     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00339-X     Document Type: Article

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