Trap influence on the performance of gallium arsenide radiation detectors

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

Volumn , Issue , 1996, Pages 361-364

  Castaldini, A ^a   Cavallini, A ^a   Polenta, L ^a   Canali, C ^a   del Papa, C ^a   Nava, F ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; ELECTRIC FIELDS; OHMIC CONTACTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SPECTROSCOPY;

CHARGE CARRIER INJECTION; LIQUID ENCAPSULATED CZOCHRALSKI (LEC) METHOD;

PARTICLE DETECTORS;

EID: 0030387577     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)