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Volumn 41, Issue 6, 1998, Pages 101-112

Understanding and controlling wafer charging damage

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; ELECTRIC CURRENTS; SEMICONDUCTOR DEVICE MODELS;

EID: 0032083841     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article
Times cited : (5)

References (13)
  • 2
    • 0347858624 scopus 로고
    • Measurement Strategy for Plasma Charging Induced Damage
    • PV95-5
    • W.L. Abdel-Ati, et al., "Measurement Strategy for Plasma Charging Induced Damage," Electrochemical Society Proceedings, PV95-5, pp. 410-417, 1995.
    • (1995) Electrochemical Society Proceedings , pp. 410-417
    • Abdel-Ati, W.L.1
  • 3
    • 0028517394 scopus 로고
    • Modeling of Oxide Breakdown from Gate Charging during Resist Ashing
    • Oct.
    • S. Fang, S. Murakawa, J.P. McVittie, "Modeling of Oxide Breakdown from Gate Charging During Resist Ashing," IEEE Trans. on Electron Devices, Vol. 41, No. 10, pp. 1848-1855, Oct. 1994.
    • (1994) IEEE Trans. on Electron Devices , vol.41 , Issue.10 , pp. 1848-1855
    • Fang, S.1    Murakawa, S.2    McVittie, J.P.3
  • 4
    • 0031258042 scopus 로고    scopus 로고
    • Prediction of Plasma Charging Induced Gate Oxide Damage by Plasma Charging Probe
    • Oct.
    • S. Ma, J.P. McVittie, K.C. Saraswat, "Prediction of Plasma Charging Induced Gate Oxide Damage by Plasma Charging Probe," IEEE Electron Device Letters, Vol. 18, No. 10, pp. 468-470, Oct. 1997.
    • (1997) IEEE Electron Device Letters , vol.18 , Issue.10 , pp. 468-470
    • Ma, S.1    McVittie, J.P.2    Saraswat, K.C.3
  • 7
    • 0345967252 scopus 로고    scopus 로고
    • Eaton Corporation, personal communication
    • W. Chang, Eaton Corporation, personal communication.
    • Chang, W.1
  • 8
    • 0345967250 scopus 로고    scopus 로고
    • Masked-photoresist charging effects during Arsenic implants
    • March 19
    • W. Lukaszek, et al., "Masked-photoresist charging effects during Arsenic implants," GSVIIUG meeting, March 19, 1997.
    • (1997) GSVIIUG Meeting
    • Lukaszek, W.1
  • 12
    • 0030649788 scopus 로고    scopus 로고
    • Study of Pattern Dependent Charging in a High-density, Inductively Coupled Metal Etcher
    • Monterey, CA, May
    • R. Patrick, et al., "Study of Pattern Dependent Charging in a High-density, Inductively Coupled Metal Etcher," 2nd International Symposium on Plasma Process Induced Damage, Monterey, CA, pp. 59-62, May 1997.
    • (1997) 2nd International Symposium on Plasma Process Induced Damage , pp. 59-62
    • Patrick, R.1
  • 13
    • 0010598547 scopus 로고    scopus 로고
    • available from Wafer Charging Monitors Inc., 127 Marine Road, Woodside, CA 94062
    • W. Lukaszek, "The Fundamentals of CHARM-2," available from Wafer Charging Monitors Inc., 127 Marine Road, Woodside, CA 94062.
    • The Fundamentals of CHARM-2
    • Lukaszek, W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.