Prediction of plasma charging induced gate oxide damage by plasma charging probe

IEEE Electron Device Letters

Volumn 18, Issue 10, 1997, Pages 468-470

  Ma, Shawming ^a,b   McVittie, James P ^a,b   Saraswat, Krishna C ^a,b  

^a IEEE   (United States)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CURRENT VOLTAGE CHARACTERISTICS; MOS DEVICES; PHOTORESISTS; PROBES; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; SUBSTRATES;

LANGMUIR PROBE MEASUREMENT; PLASMA CHARGING CURRENT; PLASMA CHARGING PROBE; PLASMA CURRENT DRIVE CHARACTERISTICS;

SEMICONDUCTOR PLASMAS;

EID: 0031258042     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.624913     Document Type: Article

References (8)

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3. S. Ma and J. P. McVittie, "Real-Time measurement of transients and electrode edge effects for plasma charging induced damage," in IEDM Tech. Dig., 1994, pp. 463-466.
4. _, "Characterization of plasma surface charging using a Real-Time On-wafer probe," in Proc. ECS Symp. Process Control, Diagnostics, and Modeling in Semiconductor Manufacturing I, vol. 95-4, 1995, pp. 401-411.
5. _ "Prediction of plasma charging induced gate oxide tunneling current and antenna dependence by plasma charging probe," in Proc. 1st Int. Symp. Plasma Process-Induced Damage (P2ID), 1996, pp. 20-24.
6. S. Fang, S. Murakawa, and J. P. McVittie, "Modeling of oxide break-down from gate charging during resist ashing," IEEE Trans. Electron Devices, vol. 41, pp. 1848-1855, Oct. 1994.
7. 2 magnetron plasma," J. Appl. Phys., vol. 72, no. 10, pp. 4865-4871, 1992.
8. H. Shin, K. Noguchi, and C. Hu, "Modeling oxide thickness dependence of charging damage by plasma processing," IEEE Electron. Dev. Lett., vol. 14, pp. 509-511, Nov. 1993.