Monolithic wavelength-graded VCSEL and resonance-enhanced photodetector arrays for parallel optical interconnects

IEEE Photonics Technology Letters

Volumn 10, Issue 5, 1998, Pages 642-644

  Luong, S O ^b   Ortiz, G G ^b,c   Zhou, Y ^b   Lu, Jun ^b   Hains, C P ^b   Cheng, Julian ^a,b   Hou, H Q ^a,d   Vawter, G A ^a,d  

^a IEEE

^b UNIVERSITY OF NEW MEXICO   (United States)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^d SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Integrated optoelectronics; Optical array; Optical communication; Optical interconnections; Optoelectronic devices; Photodetectors; Semiconductor laser arrays; Wavelength division multiplexing

Indexed keywords

FREQUENCY DIVISION MULTIPLEXING; INTEGRATED OPTOELECTRONICS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOLITHIC INTEGRATED CIRCUITS; OPTICAL COMMUNICATION; OPTICAL INTERCONNECTS; PHOTODETECTORS; RESONANCE; SEMICONDUCTOR GROWTH; SUBSTRATES;

MONOLITHIC ARRAYS; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0032074128     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.669222     Document Type: Article

References (7)

1. W. Yuen, G. S. Li, and C. J. Chang-Hasnain, "Multiple-wavelength vertical-cavity surface-emitting laser arrays with a record wavelength span," IEEE Photon. Technol. Lett., vol. 8, pp. 4-6, Jan. 1996.
2. H. Saito, I. Ogura, and Y. Sugimoto, "Uniform CW operation of multiple-wavelength vertical-cavity surface-emitting lasers fabricated by mask molecular beam epitaxy," IEEE Photon. Technol. Lett., vol. 8, pp. 1118-1120, Sept. 1996.
3. T. Wipiejewski, M. G. Peters, E. R. Hegblom, and L. A. Coldren, "Vertical-cavity surface-emitting laser diodes with post-growth wavelength adjustment," IEEE Photon. Technol. Lett., vol. 7, pp. 727-729, July 1995.
4. G. G. Ortiz, S. Q. Luong, J. Cheng, H. Q. Hou, G. A. Vawter, and B. E. Hammons, "Monolithic, multi-wavelength VCSEL arrays by surface-controlled MOCVD growth rate enhancement and reduction," IEEE Photon. Technol. Lett., vol. 9, pp. 1069-1071, Aug. 1997.
5. G. G. Ortiz, C. P. Hains, J. Cheng, H. Q. Hou, and J. C. Zolper, "Monolithic integration of InGaAs VCSEL's with resonance-enhanced quantum-well photo-detectors," Electron. Lett., vol. 32, no. 13, pp. 1205-1207, June 1996.
6. P. Dermeester, P. Van Daele, and R. Baets, "Growth behavior during nonplanar metalorganic vapor phase epitaxy," J. Appl. Phys., vol. 63, no. 7, pp. 2284-2290, 1988.
7. L. Buydens, P. Demeester, M. Van Ackere, A. Ackaert, and P. Van Daele, "Thickness variations during MOVPE growth on patterned substrates," J. Electron. Mater., vol. 19, no. 4, pp. 317-321, 1990.