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Volumn 8, Issue 1, 1996, Pages 4-6

Multiple-wavelength vertical-cavity surface-emitting laser arrays with a record wavelength span

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

EID: 0029735395     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.475759     Document Type: Article
Times cited : (24)

References (8)
  • 2
    • 0027625429 scopus 로고
    • 2-D WDM optical interconnects using multiple-wavelength VCSEL's for simultaneous and reconfigurable communication among many planes
    • A. Willner, C. J. Chang-Hasnain, and J. Leight, "2-D WDM optical interconnects using multiple-wavelength VCSEL's for simultaneous and reconfigurable communication among many planes," IEEE Photon. Technol. Lett., vol. 5, pp. 838-841, 1993.
    • (1993) IEEE Photon. Technol. Lett. , vol.5 , pp. 838-841
    • Willner, A.1    Chang-Hasnain, C.J.2    Leight, J.3
  • 5
    • 0028549048 scopus 로고
    • Two-dimensional multiwavelength surface emitting laser arrays fabricated by nonplanar MOCVD
    • F. Koyama, T. Mukaihara, Y. Hayashi, N. Ohnoki, N. Hatori, and K. Iga, "Two-dimensional multiwavelength surface emitting laser arrays fabricated by nonplanar MOCVD," Electron. Lett., vol. 30, pp. 1947-1948, 1994.
    • (1994) Electron. Lett. , vol.30 , pp. 1947-1948
    • Koyama, F.1    Mukaihara, T.2    Hayashi, Y.3    Ohnoki, N.4    Hatori, N.5    Iga, K.6
  • 6
    • 0029346666 scopus 로고
    • Vertical cavity surface emitting laser diodes with post-growth wavelength adjustment
    • T. Wipiejewski, M. G. Peters, and L. A. Coldren, "Vertical cavity surface emitting laser diodes with post-growth wavelength adjustment," IEEE Photon. Technol. Lett., vol. 7, pp. 727-729, 1995.
    • (1995) IEEE Photon. Technol. Lett. , vol.7 , pp. 727-729
    • Wipiejewski, T.1    Peters, M.G.2    Coldren, L.A.3
  • 7
    • 36448999966 scopus 로고
    • Monolithic integration of multiple wavelength vertical-cavity surface-emitting lasers by mask molecular beam epitaxy
    • H. Saito, I. Ogura, Y. Sugimoto, and K. Kasahara, "Monolithic integration of multiple wavelength vertical-cavity surface-emitting lasers by mask molecular beam epitaxy," Appl. Phys. Lett., vol. 66, pp. 2466-2468, 1995.
    • (1995) Appl. Phys. Lett. , vol.66 , pp. 2466-2468
    • Saito, H.1    Ogura, I.2    Sugimoto, Y.3    Kasahara, K.4
  • 8
    • 0020751797 scopus 로고
    • Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures
    • R. Fischer, J. Klem, T. J. Drummond, R. E. Thorne, W. Kopp, H. Morkoç, and A. Y. Cho, "Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures," J. Appl. Phys., vol. 54, pp. 2508-2510, 1983.
    • (1983) J. Appl. Phys. , vol.54 , pp. 2508-2510
    • Fischer, R.1    Klem, J.2    Drummond, T.J.3    Thorne, R.E.4    Kopp, W.5    Morkoç, H.6    Cho, A.Y.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.