Uniform CW operation of multiple-wavelength vertical-cavity surface-emitting lasers fabricated by mask molecular beam epitaxy

IEEE Photonics Technology Letters

Volumn 8, Issue 9, 1996, Pages 1118-1120

  Saito, Hideaki ^a   Ogura, Ichiro ^a   Sugimoto, Yoshimasa ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; ELECTRIC CURRENTS; ENERGY GAP; FABRICATION; FREQUENCY DIVISION MULTIPLEXING; LIGHT REFLECTION; MASKS; MIRRORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

DISTRIBUTED BRAGG REFLECTOR; GAIN PEAK; MASK MOLECULAR BEAM EPITAXY; MONOLITHIC INTEGRATION; THRESHOLD GAIN; VERTICAL CAVITY SURFACE EMITTING LASER;

SEMICONDUCTOR LASERS;

EID: 0030241810     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.531808     Document Type: Article

References (11)

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